Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
[HTML][HTML] An overview of normally-off GaN-based high electron mobility transistors
Today, the introduction of wide band gap (WBG) semiconductors in power electronics has
become mandatory to improve the energy efficiency of devices and modules and to reduce …
become mandatory to improve the energy efficiency of devices and modules and to reduce …
Review of technology for normally-off HEMTs with p-GaN gate
Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations
The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor
with p-GaN gate is presented. Critical device parameters such as ON-resistance R ON and …
with p-GaN gate is presented. Critical device parameters such as ON-resistance R ON and …
Threshold voltage instability in p-GaN gate AlGaN/GaN HFETs
L Sayadi, G Iannaccone, S Sicre… - … on Electron Devices, 2018 - ieeexplore.ieee.org
We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate
AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p …
AlGaN/GaN heterojunction field-effect transistors with double pulse measurements on the p …
[HTML][HTML] Technology and reliability of normally-off GaN HEMTs with p-type gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for
application in power converters, thanks to the positive and stable threshold voltage, the low …
application in power converters, thanks to the positive and stable threshold voltage, the low …
VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress
J He, G Tang, KJ Chen - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
The impacts of static and dynamic gate stress on the threshold voltage () instability in
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
Schottky-type-GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally …
On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
In this study, an investigation is undertaken to determine the effect of gate design
parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of …
parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of …
[HTML][HTML] Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …