Fin field effect transistor and method for fabricating the same

CC Chang, CH Lin, HH Tseng - US Patent App. 14/941,679, 2017 - Google Patents
Inventors: Che-Cheng Chang, New Taipei City (TW); Chih-Han Lin, Hsinchu City (TW);
Horng-Huei Tseng, Hsinchu A FinFET including a substrate, a plurality of insulators City …

Integrated circuit including standard cell and method and system for designing and manufacturing the same

KB Kim, MS Kim, LEE Dae-Seong - US Patent 11,126,781, 2021 - Google Patents
An integrated circuit including standard cells, a method and a computing system for
designing and fabricating the same are provided. A computer-implemented method involves …

Method of generating layout and method of manufacturing semiconductor devices using same

IW Oh, DH Kim, BS Kim, SK Park, HJ Choi - US Patent 10,643,857, 2020 - Google Patents
(57) ABSTRACT A method of generating a layout and manufacturing a semiconductor
device, including receiving a design layout of a semiconductor device including active fins; …

Methods of generating integrated circuit layout using standard cell library

S Baek, JW Seo, G Yang, LEE Dal-Hee… - US Patent 10,108,772, 2018 - Google Patents
Methods of generating an integrated circuit layout include forming a standard cell by
providing a first active area adjacent to a first cell boundary line. The first active area is …

Ultra-short-height standard cell architecture

A Chu, J Wang, B Anderson - US Patent 12,001,772, 2024 - Google Patents
Semiconductor integrated circuit devices are provided which have standard cells with ultra-
short standard cell heights. For example, a device comprises an integrated circuit …

Odd-fin height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same

H Zhuang, TW Chiang, CT Lin, LC Lu, LC Tien… - US Patent …, 2021 - Google Patents
(57) ABSTRACT A semiconductor device includes fins extending substan tially parallel to a
first direction, at least one of the fins being a dummy fin; and at least one of the fins being an …

Integrated circuit and cell structure in the integrated circuit

FU Chuan-Shian, CJ Chang… - US Patent 10,644,030, 2020 - Google Patents
An integrated circuit includes a substrate and a plurality of standard cells. The standard cells
are formed on the sub strate, wherein each standard cell comprises a first fin, a second fin …