[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach
We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The
theoretical approach used in these studies is based on ab initio calculations and includes …
theoretical approach used in these studies is based on ab initio calculations and includes …
[HTML][HTML] Do** and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on do** and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type do** over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN
substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a …
substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a …
[HTML][HTML] High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J ** of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
As the building blocks of deep UV light emitting diode (LED) technology and high‐power
electronic devices, AlGaN alloys have attracted considerable attention. In this study, AlGaN …
electronic devices, AlGaN alloys have attracted considerable attention. In this study, AlGaN …
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima… - Applied Physics …, 2012 - iopscience.iop.org
The structural and optical quality of a freestanding AlN substrate prepared from a thick AlN
layer grown by hydride vapor phase epitaxy (HVPE) on a bulk (0001) AlN substrate …
layer grown by hydride vapor phase epitaxy (HVPE) on a bulk (0001) AlN substrate …
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
AlN and AlGaN epitaxial films were deposited by metal organic chemical vapor deposition
on single crystal AlN substrates processed from AlN boules grown by physical vapor …
on single crystal AlN substrates processed from AlN boules grown by physical vapor …
Modified layered double hydroxides by using Fe-rich porous biochar derived from petrochemical wastewater sludge for enhancing heterogeneous activation of …
S Yan, S Li, S Zhang, L Qian, X Yong, X Zhang… - Journal of Water …, 2024 - Elsevier
Layered double hydroxides (LDHs) is one of the popular catalysts for peroxymonosulfate
(PMS) activation, but LDHs has a challenge in particles aggregation that impacts their …
(PMS) activation, but LDHs has a challenge in particles aggregation that impacts their …