Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
AlGaN/GaN-based multimetal gated high-electron-mobility transistor with improved linearity
This work proposes a multimetal gated (MMG) architecture to improve the linearity of
AlGaN/GaN high-electron-mobility transistor (HEMT). The general idea of this architecture is …
AlGaN/GaN high-electron-mobility transistor (HEMT). The general idea of this architecture is …
Overview of power electronic switches: A summary of the past, state-of-the-art and illumination of the future
As the need for green and effective utilization of energy continues to grow, the
advancements in the energy and power electronics industry are constantly driven by this …
advancements in the energy and power electronics industry are constantly driven by this …
A review on GaN HEMTs: nonlinear mechanisms and improvement methods
C Du, R Ye, X Cai, X Duan, H Liu… - Journal of …, 2023 - iopscience.iop.org
The GaN HEMT is a potential candidate for RF applications due to the high frequency and
large power handling capability. To ensure the quality of the communication signal, linearity …
large power handling capability. To ensure the quality of the communication signal, linearity …
Analysis of coal ash samples from thermal power plants of India for their gallium content using NAA and EDXRF techniques
Coal fly ash (CFA) is an important secondary source for the recovery of gallium (Ga) which
has a high potential for its wide applications in many strategic fields such as cellular …
has a high potential for its wide applications in many strategic fields such as cellular …
[HTML][HTML] Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review
M Zhu, Y **e, J Shao, Y Chen - Micro and Nano Engineering, 2021 - Elsevier
High electron mobility transistors (HEMTs) are the basic building block in microwave
monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz) …
monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz) …
[HTML][HTML] The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration
The linearity performance of the AlGaN/GaN high-electron-mobility-transistors (HEMTs) is
critical for circuit applications especially at millimeter-wave frequencies. In this paper, we …
critical for circuit applications especially at millimeter-wave frequencies. In this paper, we …
Analysis of InGaN back-barrier on linearity and RF performance in a graded-channel HEMT
L Geng, H Zhao, K Yu, X Ren, D Yang… - Journal of Electronic …, 2023 - Springer
The linearity and radio frequency (RF) performance of a proposed graded-channel HEMT
incorporating an InGaN back-barrier layer is investigated by an Atlas simulator. A W-like …
incorporating an InGaN back-barrier layer is investigated by an Atlas simulator. A W-like …
Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation
The mechanism of linearity improvement in AlGaN/GaN high-electron mobility transistors
(HEMTs) by low pressure chemical vapor deposition (LPCVD)-SiNx passivation is verified …
(HEMTs) by low pressure chemical vapor deposition (LPCVD)-SiNx passivation is verified …