High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Recent advances in flexible and stretchable electronics (FSE), a technology diverging from
the conventional rigid silicon technology, have stimulated fundamental scientific and …
the conventional rigid silicon technology, have stimulated fundamental scientific and …
Recent progress on high‐capacitance polymer gate dielectrics for flexible low‐voltage transistors
The gate dielectric layer is an essential element of field‐effect transistors (FETs), large area
integrated circuits, and various application electronics. Beyond basic insulation between the …
integrated circuits, and various application electronics. Beyond basic insulation between the …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
Dual-gated active metasurface at 1550 nm with wide (> 300) phase tunability
Active metasurfaces composed of electrically reconfigurable nanoscale subwavelength
antenna arrays can enable real-time control of scattered light amplitude and phase …
antenna arrays can enable real-time control of scattered light amplitude and phase …
[HTML][HTML] Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum
In this study, a new type of field-effect transistor (FET)-based biosensor is demonstrated to
be able to overcome the problem of severe charge-screening effect caused by high ionic …
be able to overcome the problem of severe charge-screening effect caused by high ionic …
Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
Capacitance–voltage characteristics of Al2O3/AlGaN/GaN structures and state density distribution at Al2O3/AlGaN interface
C Mizue, Y Hori, M Miczek… - Japanese Journal of …, 2011 - iopscience.iop.org
The potential modulation and interface states of Al 2 O 3/Al 0.25 Ga 0.75 N/GaN structures
prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage (C …
prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage (C …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …