Advances in SnO2 for Efficient and Stable n–i–p Perovskite Solar Cells
Perovskite solar cells (PSCs) based on the regular n–i–p device architecture have reached
above 25% certified efficiency with continuously reported improvements in recent years. A …
above 25% certified efficiency with continuously reported improvements in recent years. A …
Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
Perovskite solar cells with atomically coherent interlayers on SnO2 electrodes
In perovskite solar cells, the interfaces between the perovskite and charge-transporting
layers contain high concentrations of defects (about 100 times that within the perovskite …
layers contain high concentrations of defects (about 100 times that within the perovskite …
25.24%‐Efficiency FACsPbI3 Perovskite Solar Cells Enabled by Intermolecular Esterification Reaction of DL‐Carnitine Hydrochloride
L Yang, H Zhou, Y Duan, M Wu, K He, Y Li… - Advanced …, 2023 - Wiley Online Library
Judicious tailoring of the interface between the SnO2 electron‐transport layer and the
perovskite buried surface plays a pivotal role in obtaining highly efficient and stable …
perovskite buried surface plays a pivotal role in obtaining highly efficient and stable …
Chlorobenzenesulfonic potassium salts as the efficient multifunctional passivator for the buried interface in regular perovskite solar cells
Y Dong, W Shen, W Dong, C Bai, J Zhao… - Advanced Energy …, 2022 - Wiley Online Library
The interfacial properties for the buried junctions of the perovskite solar cells (PSCs) play a
crucial role for the further enhancement of the power conversion efficiency (PCE) and …
crucial role for the further enhancement of the power conversion efficiency (PCE) and …
Stabilizing buried interface via synergistic effect of fluorine and sulfonyl functional groups toward efficient and stable perovskite solar cells
The interfacial defects and energy barrier are main reasons for interfacial nonradiative
recombination. In addition, poor perovskite crystallization and incomplete conversion of PbI2 …
recombination. In addition, poor perovskite crystallization and incomplete conversion of PbI2 …
Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview
HJ Kim, JH Lee - Sensors and Actuators B: Chemical, 2014 - Elsevier
High-performance gas sensors prepared using p-type oxide semiconductors such as NiO,
CuO, Cr 2 O 3, Co 3 O 4, and Mn 3 O 4 were reviewed. The ionized adsorption of oxygen on …
CuO, Cr 2 O 3, Co 3 O 4, and Mn 3 O 4 were reviewed. The ionized adsorption of oxygen on …
Tin oxide for optoelectronic, photovoltaic and energy storage devices: a review
Tin dioxide (SnO2), the most stable oxide of tin, is a metal oxide semiconductor that finds its
use in a number of applications due to its interesting energy band gap that is easily tunable …
use in a number of applications due to its interesting energy band gap that is easily tunable …
Tin oxide electron‐selective layers for efficient, stable, and scalable perovskite solar cells
Perovskite solar cells (PSCs) have become a promising photovoltaic (PV) technology, where
the evolution of the electron‐selective layers (ESLs), an integral part of any PV device, has …
the evolution of the electron‐selective layers (ESLs), an integral part of any PV device, has …
Recent progress on the electronic structure, defect, and do** properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …