Room-temperature waveguide-coupled silicon single-photon avalanche diodes

A Govdeli, JN Straguzzi, Z Yong, Y Lin, X Luo… - npj …, 2024‏ - nature.com
Single photon detection is important for a wide range of low-light applications, including
quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A …

Nonlocal, flat-band meta-optics for monolithic, high-efficiency, compact photodetectors

M Choi, C Munley, JE Froch, R Chen, A Majumdar - Nano Letters, 2024‏ - ACS Publications
Miniaturized photodetectors are becoming increasingly sought-after components for next-
generation technologies, such as autonomous vehicles, integrated wearable devices, or …

High-responsivity Si photodiodes at 1060 nm in standard CMOS technology

X Guo, Q Liu, H Zhou, X Luan, C Li… - IEEE Electron …, 2017‏ - ieeexplore.ieee.org
Photodetection with high responsivity at the wavelength of 1060 nm is highly desirable for
light detection and ranging (LiDAR) as well as the recent emergence of swept-source optical …

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

C Novo, R Giacomini, R Doria, A Afzalian… - Semiconductor …, 2014‏ - iopscience.iop.org
This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN
photodiodes. Measurements performed on fabricated devices show a fivefold improvement …

Simulation study of high-speed Ge photodetector dark and light current degradation

B Arunachalam, Q Rafhay, D Roy… - … on Device and …, 2022‏ - ieeexplore.ieee.org
The reliability of Ge photodetectors used in the framework of Si photonics is studied using
TCAD simulation, in order to better understand the physical origin of dark current and …

Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques

JB Junior, A Pereira, R Buhler, A Perin, C Novo… - Microelectronics …, 2022‏ - Elsevier
This work addresses the possibility of light wavelength discrimination, using a specially
designed Lateral PIN Gated Photodiode and Machine Learning signal processing …

Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode

G Li, N André, B Huet, T Delhaye… - Journal of Physics D …, 2019‏ - iopscience.iop.org
We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as
the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical …

Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes

A Afzalian, D Flandre - Solid-state electronics, 2007‏ - Elsevier
This paper presents an analytical model of the optical sensitivity and dark current of thin film
SOI PIN diodes validated by measurements. This allows us to prove the very good adequacy …

Design and simulation of ultra-thin and high-efficiency silicon-based trichromatic PIN photodiode arrays for visible light communication

D Gao, J Zhang, F Wang, J Liang, W Wang - Optics Communications, 2020‏ - Elsevier
Visible light communication offers abundant spectrum resources, which can alleviate the
current shortage of wireless communication spectrum resources, and the security of the …

[HTML][HTML] The fabrication and characterization of flexible single-crystalline silicon and germanium p-intrinsic-n photodetectors on plastic substrates

M Dang, HC Yuan, Z Ma, J Ma, G Qin - Applied Physics Letters, 2017‏ - pubs.aip.org
The flexible photodetector is the essential device for many of the optoelectronic applications
and its performance can be influenced by a number of factors, including semiconductor …