Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …

The characteristics of the nitride-based blue light-emitting diode (LED) with an AlGaN/GaN
superlattice (SL) electron-blocking layer (EBL) of gradual Al mole fraction are analyzed …

In this research article, we propose an engineered electron blocking layer (EBL) structure to
address the efficiency degradation in InGaN/GaN multiple quantum well cyan-micro-LEDs …

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-
GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier …

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes
(LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection …

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs)
grown on sapphire and GaN substrates were investigated. Temperature-dependent …

We investigated the effect of coupled quantum wells to reduce electron overflow in
InGaN/GaN dot-in-a-wire phosphor-free white color light-emitting diodes (white LEDs) and to …