FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends
Ferroelectric FET (FeFET) is a singularly attractive emerging technology with a rich feature
set. Boasting high versatility, it has already been implemented in a host of applications, like …
set. Boasting high versatility, it has already been implemented in a host of applications, like …
Optimization and analysis of Si/SiGe strained vertically stacked heterostructure on insulator FeFinFET for high performance analog and RF applications
As semiconductor technology advances, the exploration of novel materials and device
architectures becomes imperative to meet the growing demands of integrated circuits for …
architectures becomes imperative to meet the growing demands of integrated circuits for …
A Compact Model for BEOL-Compatible Ferroelectric Thin Film Transistors With Metal/Ferroelectric/Semiconductor Structure
In this article, we propose a physics-based compact model for BEOL-compatible ferroelectric
thin film transistors with amorphous oxide semiconductor channel (OS-FeTFTs) to …
thin film transistors with amorphous oxide semiconductor channel (OS-FeTFTs) to …
Percolation theory-based KMC simulation for scaled Fe-FET based multi-bit computing-in-memory with temperature compensation strategy
Q Zhu, L Xu, Z Zhou, W Wei, P Xv, C Dou… - …, 2025 - iopscience.iop.org
In this letter, we investigate the impact of percolation transport mechanisms on ferroelectric
field effect transistor (FeFET) multi-value storage with kinetic Monte-Carlo (KMC) simulation …
field effect transistor (FeFET) multi-value storage with kinetic Monte-Carlo (KMC) simulation …
Monolithic 3D Integration using BEOL FeFET: Reliability, Thermal Effects, and DNN Accuracy
In this paper, we demonstrate the impact of different chip integration techniques such as 2D,
heterogeneous 3D (H3D), and monolithic 3D (M3D) on the reliability of compute-in-memory …
heterogeneous 3D (H3D), and monolithic 3D (M3D) on the reliability of compute-in-memory …
Benchmarking IWO-based Logic Circuits for Monolithic 3D Integration
This study shows a comprehensive evaluation of Back End Of Line (BEOL) compatible
Tungsten doped amorphous Indium Oxide (a-IWO) Dual-Gate (DG) Thin Film Transistor …
Tungsten doped amorphous Indium Oxide (a-IWO) Dual-Gate (DG) Thin Film Transistor …