Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Oxygen vacancies: The (in) visible friend of oxide electronics

F Gunkel, DV Christensen, YZ Chen, N Pryds - Applied physics letters, 2020 - pubs.aip.org
Oxygen vacancies play crucial roles in determining the physical properties of metal oxides,
representing important building blocks in many scientific and technological fields due to their …

An oxide Schottky junction artificial optoelectronic synapse

S Gao, G Liu, H Yang, C Hu, Q Chen, G Gong, W Xue… - ACS …, 2019 - ACS Publications
The rapid development of artificial intelligence techniques and future advanced robot
systems sparks emergent demand on the accurate perception and understanding of the …

Understanding memristive switching via in situ characterization and device modeling

W Sun, B Gao, M Chi, Q **a, JJ Yang, H Qian… - Nature …, 2019 - nature.com
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Quantum conductance in memristive devices: fundamentals, developments, and applications

G Milano, M Aono, L Boarino, U Celano… - Advanced …, 2022 - Wiley Online Library
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Comprehensive model of electron conduction in oxide-based memristive devices

C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …

Memristive synapses and neurons for bioinspired computing

R Yang, HM Huang, X Guo - Advanced Electronic Materials, 2019 - Wiley Online Library
To realize highly efficient neuromorphic computing that is comparable to biological
counterparts, bioinspired computing systems, consisting of biorealistic artificial synapses …

Nonvolatile memory materials for neuromorphic intelligent machines

DS Jeong, CS Hwang - Advanced Materials, 2018 - Wiley Online Library
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …