The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Recent progress in ammonothermal technology of bulk GaN growth in basic environment is
presented and discussed in this paper. This method enables growth of two-inch in diameter …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

GaN is a technologically indispensable material for various optoelectronic properties, mainly
due to the dopant-induced or native atomic-scale point defects that can create single photon …

This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …

We show that the atomic layer deposition (ALD) technique has great potential for
widespread use in the production of ZnO films for applications in electronic, photovoltaic …

Nous présentons ici une revue de l'état de l'art actuel en matière de recherche fondamentale
sur les matériaux pour la spintronique. L'article est essentiellement dédié aux matériaux …

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted
magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which …

The spin control possibility and its application in optoelectronic devices began an intensive
research into its utilization, in particular, in the wide-gap semiconductors such as GaN …

Diluted magnetic semiconductors have attracted significant attention for their potential in
spintronic applications. Particularly, magnetically doped GaN is highly attractive due to its …