[KSIĄŻKA][B] Infrared and terahertz detectors
A Rogalski - 2019 - books.google.com
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …
infrared and terahertz detector technology, from fundamental science to materials and …
Valence band engineering of GaAsBi for low noise avalanche photodiodes
Abstract Avalanche Photodiodes (APDs) are key semiconductor components that amplify
weak optical signals via the impact ionization process, but this process' stochastic nature …
weak optical signals via the impact ionization process, but this process' stochastic nature …
A steep switching WSe2 impact ionization field-effect transistor
Abstract The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport
represent two fundamental barriers towards the reduction of the subthreshold slope (SS) …
represent two fundamental barriers towards the reduction of the subthreshold slope (SS) …
Anisotropy of impact ionization in WSe2 field effect transistors
Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a
very promising process for manufacturing high-performance devices because the …
very promising process for manufacturing high-performance devices because the …
A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage
Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP)
exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and …
exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and …
Characterization of midwave infrared InSb avalanche photodiode
J Abautret, JP Perez, A Evirgen, J Rothman… - Journal of Applied …, 2015 - pubs.aip.org
This paper focuses on the InSb material potential for the elaboration of Avalanche
Photodiodes (APD) for high performance infrared imaging applications, both in passive or …
Photodiodes (APD) for high performance infrared imaging applications, both in passive or …
Temperature dependence of leakage current in InAs avalanche photodiodes
Measurement and analysis of the temperature dependence of bulk and surface leakage
currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At …
currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At …