This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

III–V nanowire transistors are promising candidates for very high frequency electronics
applications. The improved electrostatics originating from the gate-all-around geometry …

Two types of fin-shaped field-effect transistors (FinFETs), one with AlGaN/GaN
heterojunction and the other with heavily doped heterojunction-free GaN layer operating in …

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally
demonstrated with a high mobility In 0.53 Ga 0.47 As channel and atomic-layer-deposited …

We have investigated the electron mobility in ultrathin-body InGaAs-on-insulator devices
using physics-based modeling that self-consistently accounts for quantum confinement and …

This paper describes the electrode work-function, oxide thickness, gate-source/drain
underlap, and silicon thick ness optimization required to realize dual-V th independent-gate …

Polarization-induced p-type do** is realized in molecular beam epitaxy (MBE) grown
ultrathin body GaN/AlN heterostructures. The novel heterostructure consisting of a thin …

The exponential miniaturization of Si complementary metal–oxide–semiconductor
technology has been a key to the electronics revolution. However, the downscaling of the …

Heavily doped GaN nanochannel fin-shaped field-effect transistors (FinFETs) without
heterojunction have been fabricated and characterized for the first time. Simplified …

Wafer-scale defect-free planar III–V nanowire (NW) arrays with∼ 100% yield and precisely
defined positions are realized via a patterned vapor–liquid–solid (VLS) growth method …