This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

A method of controlling threading dislocation densities in Ge on Si involving graded SiGe
layers and chemical-mechanical polishing (CMP) is presented. This method has allowed us …

The utility of Raman spectroscopy for the simultaneous determination of composition and
strain in thin Ge x Si1− x layers has been investigated. Using data from the literature and …

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or
tunable energy splittings of the valley states associated with degenerate conduction band …

Coherent coupling between distant qubits is needed for many scalable quantum computing
schemes. In quantum dot systems, one proposal for long-distance coupling is to coherently …

Heterostructures in the form of thin layers of one material grown on a substrate have been
the subject of intense study for several years. In the case of semiconductor systems the aim …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The fundamental chemical principles underlying ultra-high-vacuum chemical vapor
deposition (UHV CVD) are described in this overview. A variety of unique devices and …