Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

Annotation" Intermodulation Distortion in Microwave and Wireless Circuits presents the full
range of distortion specs to help practitioners select the right telecommunications equipment …

This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD)
behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small …

In this article, an artificial neural network (ANN)-based large-signal model (LSM) of
AlGaN/GaN high electron mobility transistors (HEMTs) with accurate buffer-related trap** …

This paper presents a nonlinear equivalent circuit model of microwave power GaN high
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …

This paper provides a comprehensive analysis of the AM/AM and AM/PM nonlinear
distortion generation mechanisms arising in the most common RF power amplifier (PA) …

As GaN technology has developed, first in research laboratories and more recently in
multiple commercial device manufacturers, the demand for improved nonlinear models has …

Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio
frequency (RF) and microwave power amplifier design, including well-known historical and …

This paper presents a highly linear cascode power amplifier (PA) for 5-GHz 802.11 ac
(wireless local area network) WLAN applications, which is fabricated with a 0.13-μm …

In this paper, efficiency-limiting physical constraint effects imposed on the knee voltage,
along with a variation of the optimum load resistance, are investigated for highly efficient …