Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

In recent years, non-< 111>-oriented semiconductor nanowires have attracted increasing
interest in terms of fundamental research and promising applications due to their …

Nanowire growth by the vapour–liquid–solid (VLS) process enables a high level of control
over nanowire composition, diameter, growth direction, branching and kinking, periodic …

We report the Au catalyst-assisted synthesis of 20 μm long GaAs nanowires by the vapor–
liquid–solid hydride vapor phase epitaxy (HVPE) exhibiting a polytypism-free zincblende …

Stacking faults (SFs) are commonly observed crystalline defects in III–V semiconductor
nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs …

Polytype nanodots are arguably the simplest nanodots than can be made, but their
technological control was, up to now, challenging. We have developed a technique to …

We present a self-consistent model for the Zeldovich nucleation rate that determines the
nucleation probabilities, growth rates, and even the preferred crystal structure of Au …

We present a kinetic growth model having a particular emphasis on the influence of the
group V element on the preferred crystal structure of Au-catalyzed III-V nanowires. The …