The light-emitting diode (LED) is among promising candidates of light sources in visible light
communication (VLC); however, strong internal polarization fields in common c-plane LEDs …

The method of metalorganic vapor phase epitaxy (MOVPE) has developed over the recent
50 years into an indispensable tool in research and industrial production for novel …

Compared with conventional anti-reflective film, an anti-reflective sub-wavelength surface
structure provides an ideal choice for a sapphire optical window especially in harsh …

This paper reviews our recent investigations about semipolar GaN‐based optoelectronic
heterostructures grown on foreign substrates. Two basically different approaches are …

This report describes the successful realization of high‐quality semi‐polar‐GaN templates
grown on 100 mm diameter r‐plane patterned sapphire. Trench patterning is accomplished …

The hetero‐epitaxy of () GaN on () sapphire was optimized in metal–organic vapor phase
epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN …

Among the major obstacles for development of non-polar and semipolar GaN structures on
foreign substrates are stacking faults which deteriorate the structural and optical quality of …

The diffuse scattering from basal plane stacking faults (BSF) of (112) GaN layers was
observed by laboratory X-ray diffraction (XRD) systems. To observe the diffuse scattering …

We report on the growth of semi‐polar GaN (11 2) templates on patterned Si (113)
substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls …

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy
(vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width …