Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …

Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an
ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Nanoscale room-temperature ferroelectricity is ideal for develo** advanced non-volatile
high-density memories. However, reaching the thin film limit in conventional ferroelectrics is …

Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film
performance is considerably worse, thus precluding their use in next-generation devices …

Strong interest in resistive switching phenomena is driven by a possibility to develop
electronic devices with novel functional properties not available in conventional systems …

Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …

Major challenges have emerged as microelectromechanical systems (MEMS) move to
smaller size and increased integration density, while requiring fast response and large …

Ferroelectric materials are well‐suited for a variety of applications because they can offer a
combination of high performance and scaled integration. Examples of note include …