[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors

D Kwan, M Kesaria, EA Anyebe, D Huffaker - Infrared Physics & Technology, 2021 - Elsevier
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …

Influence of pixel etching on electrical and electro-optical performances of a ga-free inas/inassb t2sl barrier photodetector for mid-wave infrared imaging

M Bouschet, U Zavala-Moran, V Arounassalame… - Photonics, 2021 - mdpi.com
In this paper, the influence of etching depth on the dark current and photo-response of a mid-
wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching …

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

M Delmas, BL Liang… - Quantum Sensing and …, 2019 - spiedigitallibrary.org
In this work, the electronic band structure of the InAs/GaSb superlattice (SL) is calculated
using a commercial 8-band k⸳ p solver and the electrical performance of longwave nBp …

[PDF][PDF] Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation

C Bataillon, JP Perez, R Alchaar, A Michez… - Opto-Electronics …, 2023 - bibliotekanauki.pl
In this work, the authors investigated the influence of proton-irradiation on the dark current of
XBp longwave infrared InAs/GaSb type-II superlattice barrier detectors, showing a cutoff …

Wet etching for InAs-based InAs/Ga (As) Sb superlattice long wavelength infrared detectors

吴佳, 徐志成, 陈建新, 何力 - Journal of Infrared and Millimeter …, 2019 - journal.sitp.ac.cn
Wet chemical etching of InAs-based InAs/Ga (As) Sb superlattice long wavelength infrared
photodiodes was studied in this paper. The etching experiments using citric acid …

T2SL development for space at IRnova: from eSWIR to VLWIR

R Ivanov, L Höglund, D Ramos… - … , Systems, and Next …, 2019 - spiedigitallibrary.org
In this paper, results from the development of InAs/GaSb superlattice focal plane arrays
(FPAs) at IRnova will be presented. A versatile and robust detector design is used that …

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

M Delmas, DCM Kwan, MC Debnath… - Journal of Physics D …, 2019 - iopscience.iop.org
In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing
SL) is explored and investigated from the growth to the device performance. First, several …

[PDF][PDF] Antimonide-based Superlattice Infrared Barrier Photodetectors.

U Zavala-Moran, R Alchaar, JP Perez… - …, 2020 - researchgate.net
Barrier structures are now the design of high performance antimonide-based (Sb-based)
cooled infrared (IR) quantum detectors. In this communication, we report on electrical and …

[PDF][PDF] Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain

R Alchaar, JB Rodriguez, L Höglund… - Opto-Electronics …, 2020 - bibliotekanauki.pl
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb
type-2 superlattice barrier photodetector operating in the full longwave infrared spectral …

Type-II superlattices for SWaP and high-resolution detectors at IRnova

L Höglund, S Naureen, R Ivanov… - Infrared Technology …, 2021 - spiedigitallibrary.org
Midwave infrared (MWIR) type-II superlattices (T2SL) have revolutionized the market with
possibility of low Size, Weight and Power (SWaP) detectors. IRnova currently has a full-scale …