[ΒΙΒΛΙΟ][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
P-type CuO and Cu2O transistors derived from a sol–gel copper (II) acetate monohydrate precursor
We realize p-type thin film transistors (TFT) with solution-processed channels using a sol–
gel route, based on a copper (II) acetate precursor. The sol–gel process initially produces …
gel route, based on a copper (II) acetate precursor. The sol–gel process initially produces …
Classical modelling of grain size and boundary effects in polycrystalline perovskite solar cells
A theoretical approach based on the Matthiessen rule for scattering lifetime is presented to
formulate the effective characteristics of polycrystalline solar cells. Application of this method …
formulate the effective characteristics of polycrystalline solar cells. Application of this method …
Effect of chromium dopant on electrospun zinc oxide nanostructure: A room temperature ethanol sensor
Nanomaterials-based gas sensors represent a ground-breaking endeavour that establishes
a systematic and methodical approach to the detection of deleterious contaminants on a …
a systematic and methodical approach to the detection of deleterious contaminants on a …
Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors
Y Yang, J Yang, W Yin, F Huang, A Cui, D Zhang… - Applied Surface …, 2019 - Elsevier
P-type CuO films were prepared by solution processed method and annealed at 300° C with
the annealing time of 10, 30, 60, 90, and 120 min, respectively. X-ray diffraction and atomic …
the annealing time of 10, 30, 60, 90, and 120 min, respectively. X-ray diffraction and atomic …
Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors
In this study, high-performance SnO 2 thin-film transistors (TFTs) were fabricated at
temperatures below 300° C using the combustion-assisted sol-gel method. The internal …
temperatures below 300° C using the combustion-assisted sol-gel method. The internal …
Thermoelectric properties of large-scale Zn3 P2 nanowire assemblies
Gram quantities of both unfunctionalized and 1, 4-benzenedithiol (BDT) functionalized zinc
phosphide (Zn 3 P 2) nanowire powders, synthesized using direct reaction of zinc and …
phosphide (Zn 3 P 2) nanowire powders, synthesized using direct reaction of zinc and …
Improvement in the Performance of Sol–Gel Processed In2O3 Thin-Film Transistor Depending on Sb Dopant Concentration
Solution-processed Sb-doped In 2 O 3 thin-film transistors (TFTs) have been fabricated. To
improve the electrical performance, In 2 O 3 was doped with Sb, which exhibits a higher …
improve the electrical performance, In 2 O 3 was doped with Sb, which exhibits a higher …
A SnO2 solution-gated transistor biosensor with high sensitivity and low operating voltage: application to detect Hg2+
J Zhou, J Zhang, H Huang, R Shang, S **… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
Owing to inherent signal amplification, solution-gated transistor biosensor (SGTB) features
high sensitivity. Herein, an SGTB based on polycrystalline SnO2 thin film (PSTF) was …
high sensitivity. Herein, an SGTB based on polycrystalline SnO2 thin film (PSTF) was …
Effect of grain boundary scattering on electron mobility of N-polarity InN films
Transport properties of InN layers with both lattice polarities are reported. It is proposed that
grain boundaries form potential barriers for electrons and thus lead to a reduction of electron …
grain boundaries form potential barriers for electrons and thus lead to a reduction of electron …