Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Two-dimensional (2D) ferroelectrics with robust polarization down to atomic thicknesses
provide building blocks for functional heterostructures. Experimental realization remains …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile
memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been …

Thin film metal–insulator–metal capacitors with undoped HfO2 as the insulator are
fabricated by sputtering from ceramic targets and subsequently annealed. The influence of …

Negative differential capacitance in ferroelectrics, which can be stabilized using a dielectric,
could be used to overcome the limitations of capacitive coupling in electronic devices …