The detection and measurement of gas concentrations using the characteristic optical
absorption of the gas species is important for both understanding and monitoring a variety of …

This paper describes development of a novel mid-infrared light emitting diode (LED) and
photodiode (PD) light source/detector combination and use within a non-dispersive infrared …

Nickel oxide (NiO) is a versatile wide band gap semiconductor material. At present,
transparent conducting oxide films find application as transparent electrodes and window …

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An
absorption layer composition of In 0.28 Ga 0.72 As 0.25 Sb 0.75 allowed for lattice matching …

Volatile organic compounds (VOCs) have received increasing attentions recently. They are
important for air quality monitoring, and biomarkers for diseases diagnosis. For the gas …

We report the design, growth, processing, and characterization of resonant cavity enhanced
photodiodes for the midwave infrared at∼ 3.72 μm on GaSb. Using AlAsSb/GaSb mirrors …

InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …

Abstract In 0.145 Ga 0.855 As y Sb 1− y semiconductor alloys were grown on GaSb (100)
substrates by varying the As content by liquid phase epitaxy (LPE). We demonstrated that …

Alloying is one of the most common approaches to modulate the properties of
semiconductors, such as indium antimonide (InSb) with practical applications in mid-infrared …

Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been
engineered to provide a favourable band structure for the suppression of non-radiative …