[BOOK][B] Semiconductor surfaces and interfaces
W Mönch - 2013 - books.google.com
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
semiconductor surfaces and interfaces. The first part introduces the general aspects of …
Defect self-annihilation in surfactant-mediated epitaxial growth
Islanding and misfit relaxation are obstacles for growth of heteroepitaxial films. Surfactants
not only inhibit islanding, but also control defect structure. Growth of Ge on Si (111) was …
not only inhibit islanding, but also control defect structure. Growth of Ge on Si (111) was …
Geometric and electronic structure of Sb on Si (111) by scanning tunneling microscopy
HB Elswijk, D Dijkkamp, EJ Van Loenen - Physical Review B, 1991 - APS
Scanning tunneling microscopy and spectroscopy (STS) are used to investigate the Si (111)-
Sb surface. At an Sb coverage of a few percent of a monolayer (ML), Sb substitutes Si …
Sb surface. At an Sb coverage of a few percent of a monolayer (ML), Sb substitutes Si …
Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films
Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular
beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si (111)-(√ 3×√ 3) R30° …
beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si (111)-(√ 3×√ 3) R30° …
KPFM imaging of Si (1 1 1) 53× 53-Sb surface for atom distinction using NC-AFM
K Okamoto, K Yoshimoto, Y Sugawara, S Morita - Applied surface science, 2003 - Elsevier
We investigate the possibility of distinction of individual atom species using noncontact
atomic force microscopy (NC-AFM) combined with the electrostatic force (ESF) …
atomic force microscopy (NC-AFM) combined with the electrostatic force (ESF) …
Evidence for trimer reconstruction of Si (111)√ 3×√ 3-Sb: Scanning tunneling microscopy and first-principles theory
P Mårtensson, G Meyer, NM Amer, E Kaxiras… - Physical Review B, 1990 - APS
Scanning-tunneling-microscopy images of the Si (111)√ 3×√ 3-Sb surface show a trigonal
lattice of protrusions, with a characteristic dependence on bias voltage. When probing filled …
lattice of protrusions, with a characteristic dependence on bias voltage. When probing filled …
Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si (111): Strain relief mechanisms and growth kinetics
G Meyer, B Voigtländer, NM Amer - Surface science, 1992 - Elsevier
The role of strain relief and kinetics in surfactant-mediated epitaxial growth of Ge on Si (111)
was studied with scanning tunneling microscopy. For coverages of up to≈ 20 ML the …
was studied with scanning tunneling microscopy. For coverages of up to≈ 20 ML the …
Surfactant-mediated growth of Ge on Si (111)
The introduction of a surfactant changes the growth in the Si (111)/Ge system from islanding
to a continuous film. A Sb monolayer floats at the growth front without detectable …
to a continuous film. A Sb monolayer floats at the growth front without detectable …
Sb adsorption on Si< 111> analyzed by ellipsometry and reflection high‐energy electron diffraction: Consequences for Sb do** in Si molecular‐beam epitaxy
S Andrieu - Journal of applied physics, 1991 - pubs.aip.org
In this paper, two distinct studies are presented: Sb adsorption on Si< 111> analyzed by
both ellipsometry and electron diffraction in real time, and Sb do** in Si molecular‐beam …
both ellipsometry and electron diffraction in real time, and Sb do** in Si molecular‐beam …
The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si (111)
M Horn-von Hoegen, M Pook, A Al Falou, BH Müller… - Surface science, 1993 - Elsevier
The growth of Ge on Si is strongly modified by surface active species called surfactants.
While the effectiveness of Sb as a surfactant in forcing layer-by-layer growth of Ge on Si …
While the effectiveness of Sb as a surfactant in forcing layer-by-layer growth of Ge on Si …