Nanometer size field effect transistors for terahertz detectors
Nanometer size field effect transistors can operate as efficient resonant or broadband
terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far …
terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far …
[LLIBRE][B] Handbook of terahertz technologies: devices and applications
HJ Song, T Nagatsuma - 2015 - books.google.com
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been
investigated in a few limited fields, such as astronomy, because of a lack of devices for their …
investigated in a few limited fields, such as astronomy, because of a lack of devices for their …
Field effect transistors for terahertz detection: Physics and first imaging applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of
the channel dimensions and can reach the THz range for sub-micron gate lengths …
the channel dimensions and can reach the THz range for sub-micron gate lengths …
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
This paper reviews recent advances in our original 2D-plasmon-resonant terahertz emitters.
The structure is based on a high-electron-mobility transistor and featured with doubly …
The structure is based on a high-electron-mobility transistor and featured with doubly …
[LLIBRE][B] Laser-matter interaction for radiation and energy
HK Malik - 2021 - books.google.com
The interaction of high-power lasers with matter can generate Terahertz radiations that
efficiently contribute to THz Time-Domain Spectroscopy and also would replace X-rays in …
efficiently contribute to THz Time-Domain Spectroscopy and also would replace X-rays in …
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based
high electron mobility transistors. The emission peak is found to be tunable by the gate …
high electron mobility transistors. The emission peak is found to be tunable by the gate …
Room-temperature amplification of terahertz radiation by grating-gate graphene structures
We study terahertz (THz) radiation transmission through grating-gate graphene-based
nanostructures. We report on room-temperature THz radiation amplification stimulated by …
nanostructures. We report on room-temperature THz radiation amplification stimulated by …
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
We report on room-temperature, resonant detection of 0.6 THz radiation by 250 nm gate
length Ga As∕ Al Ga As heterostructure field-effect transistor. We show that the detection is …
length Ga As∕ Al Ga As heterostructure field-effect transistor. We show that the detection is …
Room-temperature terahertz emission from nanometer field-effect transistors
N Dyakonova, A El Fatimy, J Łusakowski… - Applied physics …, 2006 - pubs.aip.org
Room-temperature generation of terahertz radiation in nanometer gate length In Al As∕ In
Ga As and Al Ga N∕ Ga N high-mobility transistors is reported. A well-defined source-drain …
Ga As and Al Ga N∕ Ga N high-mobility transistors is reported. A well-defined source-drain …
Hydrodynamic theory of the Dyakonov-Shur instability in graphene transistors
We present a comprehensive theory of the Dyakonov-Shur (DS) plasma instability in current-
biased graphene transistors. Using the hydrodynamic approach, we derive equations …
biased graphene transistors. Using the hydrodynamic approach, we derive equations …