Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
High-performance shielded coplanar waveguides for the design of CMOS 60-GHz bandpass filters
AL Franc, E Pistono, D Gloria… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This paper presents optimized very high performance CMOS slow-wave shielded CPW
transmission lines (S-CPW TLines). They are used to realize a 60-GHz bandpass filter, with …
transmission lines (S-CPW TLines). They are used to realize a 60-GHz bandpass filter, with …
A high slow-wave factor microstrip structure with simple design formulas and its application to microwave circuit design
WS Chang, CY Chang - IEEE Transactions on Microwave …, 2012 - ieeexplore.ieee.org
This paper proposes a new microstrip slow-wave structure. The unit cell comprises a
Schiffman section of meander line and a shunt open-circuited stub. No via-holes and ground …
Schiffman section of meander line and a shunt open-circuited stub. No via-holes and ground …
Automated design of analog and high-frequency circuits
Computational intelligence techniques are becoming more and more important for
automated problem solving nowadays. Due to the growing complexity of industrial …
automated problem solving nowadays. Due to the growing complexity of industrial …
An efficient high-frequency linear RF amplifier synthesis method based on evolutionary computation and machine learning techniques
Existing radio frequency (RF) integrated circuit (IC) design automation methods focus on the
synthesis of circuits at a few GHz, typically less than 10 GHz. That framework is difficult to …
synthesis of circuits at a few GHz, typically less than 10 GHz. That framework is difficult to …
Design of capacitively loaded coupled-line bandpass filters with compact size and spurious suppression
This paper is focused on the synthesis of capacitively loaded coupled lines for the design of
bandpass filters with compact size and spurious suppression. The filters consist of cascaded …
bandpass filters with compact size and spurious suppression. The filters consist of cascaded …
A wideband triple-stacked CMOS distributed power amplifier using double inductive peaking
J Kim - IEEE Microwave and Wireless Components Letters, 2019 - ieeexplore.ieee.org
A wideband triple-stacked CMOS distributed power amplifier (DPA) is implemented using a
commercial 65-nm CMOS process. To enhance the output power, a triple-stacked field effect …
commercial 65-nm CMOS process. To enhance the output power, a triple-stacked field effect …
A slow-wave microstrip line with a high-Q and a high dielectric constant for millimeter-wave CMOS application
A slow-wave microstrip line (S-MSL) designed in 0.13 μm CMOS technology with a high-Q
and a high dielectric constant is proposed in this letter. Grounded metal strips with two metal …
and a high dielectric constant is proposed in this letter. Grounded metal strips with two metal …
Performance improvement versus CPW and loss distribution analysis of slow-wave CPW in 65 nm HR-SOI CMOS technology
High-performance integrated slow-wave coplanar waveguides (S-CPW) are compared with
conventional coplanar waveguides (CPW) fabricated in a 65-nm High-Resistivity-SOI (HR …
conventional coplanar waveguides (CPW) fabricated in a 65-nm High-Resistivity-SOI (HR …
Compact high-Q, low-loss mmW transmission lines and power splitters in RF CMOS technology
AL Franc, E Pistono, N Corrao… - 2011 IEEE MTT-S …, 2011 - ieeexplore.ieee.org
A set of slow-wave transmission lines designed in the BiCMOS9-MW technology from
STMicroelectronics is characterized up to 110 GHz. State-of-the-art measured quality factors …
STMicroelectronics is characterized up to 110 GHz. State-of-the-art measured quality factors …
Terahertz slow-wave scalable interconnect based on back-end-of-line (BEOL) in 40 nm CMOS
X Huang, Y Shen, S Hu - Applied Physics Letters, 2022 - pubs.aip.org
This paper proposes a terahertz (THz) slow-wave scalable interconnect based on
multilayered back-end-of-lines in a complementary metal-oxide-semi-conductor process …
multilayered back-end-of-lines in a complementary metal-oxide-semi-conductor process …