Porous nitride semiconductors reviewed
Porous nitride semiconductors are a fast-develo** area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …
range of new properties and applications, including strain free optical reflectors, chemical …
Porous semiconductor compounds
In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …
GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser
C Li, M Feng, J Liu, W Liu, X Sun, J Liu… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
The article reports the successful fabrication of GaN-based resonant cavity light-emitting
diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To …
diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To …
[HTML][HTML] Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
A comparative study of the anodization processes occurring at the GaAs (111) A and GaAs
(111) B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO 3 …
(111) B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO 3 …
Electrochemical etching of AlGaN for the realization of thin-film devices
Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and
electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical …
electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical …
Lift-off of GaN-based LED membranes from Si substrate through electrochemical etching
T Jiang, J Wang, J Liu, M Feng, S Yan… - Applied Physics …, 2022 - iopscience.iop.org
Semiconductor nano-membranes provide a new way to develop optical devices with better
performance. Herein, we report a fabrication method of GaN-based LED membranes with a …
performance. Herein, we report a fabrication method of GaN-based LED membranes with a …
Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications
B Wei, Y Han, Y Wang, H Zhao, B Sun, X Yang, L Han… - RSC …, 2020 - pubs.rsc.org
Highly reflective and conductive distributed Bragg reflectors (DBRs) are the key for high-
performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers …
performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers …
[HTML][HTML] Smooth GaN membranes by polarization-assisted electrochemical etching
III-nitride membranes offer promising perspectives and improved device designs in
photonics, electronics, and optomechanics. However, the removal of the growth substrate …
photonics, electronics, and optomechanics. However, the removal of the growth substrate …
Electrochemical Prediction Tool of Porous GaN Morphology
I Medjahed, C Licitra, S Sadki… - The Journal of Physical …, 2024 - ACS Publications
We report a systematic electrochemical study that allows fine-tuning of the pore formation
process in gallium nitride (GaN). We have investigated several parameters of pore …
process in gallium nitride (GaN). We have investigated several parameters of pore …
Chemical and morphological characterization of the anodic oxidation of n-GaN in inorganic electrolytes
To study the nature of electrochemical property of III-nitrides, we examined here the
behaviour of a n-GaN anodic oxidation reaction within a voltage range of 5–20 V in …
behaviour of a n-GaN anodic oxidation reaction within a voltage range of 5–20 V in …