Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …

Bulk trap** and its effects on threshold voltage hysteresis (ΔV TH) in Al 2 O 3/AlGaN/GaN
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …

Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …

Beta-phase gallium oxide (β-Ga 2 O 3) research has gained accelerated pace nowadays.
However, the high acceptor activation energy obstructs the development of homojunction …

Beta phase-gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap semiconductor
but lacks efficient p-type do**, which hinders development of high-performance bipolar …

During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the
resulting diodes were characterized to analyze electrical behavior and junction quality. p …

The $\beta $-Ga $ _2 $ O $ _3 $ has exceptional electronic properties with vast potential in
power and RF electronics. Despite the excellent demonstrations of high-performance …

Recent demonstrations of grafted pn junctions combining n-type GaN with p-type
semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like …

Degradation of fluorinated organic pollutants remains a challenge due to the strong
electronegativity of fluorine and the high structural stability of C–F bonds. Advanced …