Hyperdo** silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …

Hyperdo** that introduces impurities with concentrations exceeding their equilibrium
solubility has been attracting great interest since the tuning of semiconductor properties …

Doped graphene could be of use in next-generation electronic and photonic devices.
However, chemical do** cannot be precisely controlled in the material and leads to …

Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly,
and can enable the development of on‐chip complementary metal‐oxide‐semiconductor …

The existence of surface plasmon polaritons in doped silicon micro-scale structures has
opened up new and innovative possibilities for applications, such as sensing, imaging, and …

The adoption of Artemisinin based combination therapies (ACT) constitutes a basic strategy
for malaria control in sub-Saharan Africa. Moreover, since cases of ACT resistance have …

The quest for high-performance solar cell absorbers has garnered significant attention in the
field of photovoltaic research in recent years. To overcome the Shockley–Queisser (SQ) limit …

The indirect band gap of the diamondlike silicon does not allow direct travel of electrons
between valence band and conduction band edges, which has limited its application and …

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational
fingerprints of molecules with the plasmonic resonances, creating surface-enhanced …

Si hyperdoped with chalcogens (S, Se, Te) is well known to possess unique properties such
as an insulator-to-metal transition and a room-temperature sub-band-gap absorption. These …