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The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface
The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO 2) doped-
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …
A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements
In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe: PVA)/n-Si (MPS-2) type
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …
Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures
In this study, the real and imaginary components of the complex dielectric (ε*= ε′-jε'′),
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer
The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm 2 O
3) polymer interlayers on the electrical characteristics in detail. The fabricated reference …
3) polymer interlayers on the electrical characteristics in detail. The fabricated reference …
Electrical properties of Al/PCBM: ZnO/p-Si heterojunction for photodiode application
In this paper, the electrical characteristics of spin-coated PCBM: ZnO interlayered Al/PCBM:
ZnO/Si diode are investigated under the aim of photodiode application. Under dark …
ZnO/Si diode are investigated under the aim of photodiode application. Under dark …
Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface
In the present study, voltage-dependent variation of the interface traps (D it) and series
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
resistance (R s) and their effects on the electrical features of a Schottky structure with CdZnO …
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
The temperature effect on the conduction mechanism of Au/Cu 2 O–CuO–PVA/n-Si (MPS)
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements
Abstract In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced
and the radiation effects on their electrical properties were investigated using the current …
and the radiation effects on their electrical properties were investigated using the current …
Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5%(graphene: PVA) by impedance spectroscopy
The Z–V measurements were performed in wide-range voltage (±6 V), and then the
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation
The effect of 60 Co-iradiation) on the electrical parameters in the Au/(ZnOMn: PVP)/n-Si SDs
have been investigated using the current-voltage (I–V) and capacitance/conductance …
have been investigated using the current-voltage (I–V) and capacitance/conductance …