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Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off
F Gucmann, B Meng, A Chvála, R Kúdela… - ACS Applied …, 2024 - ACS Publications
High-frequency wireless communication in consumer, defense, and space applications
heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka …
heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka …
A Study on Device Properties of High Electron Mobility Transistors
P Taki, P Padala, R Panja, S Karmakar… - … Engineering & Nano …, 2023 - ieeexplore.ieee.org
Electrical characteristics of Field Effect Transistors depend upon its mechanical structure of
the device. It depends upon the dimension of the electrodes along with the electrical …
the device. It depends upon the dimension of the electrodes along with the electrical …