2021-08-13 Assigned to CAMBRIDGE ENTERPRISE LIMITED reassignment CAMBRIDGE
ENTERPRISE LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

Provided are a high electron mobility transistor and a method of manufacturing the high
electron mobility tran sistor. The high electron mobility transistor includes a gate electrode …

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating
or switching and having potential barriers; Capacitors or resistors having potential barriers …

An integrated circuit (IC) includes a lower group III-N layer having a first composition over a
substrate, and an upper group III-N layer having a different second composition over the …

The present invention provides a method of forming an insulating structure of a high electron
mobility transistor (HEMT), firstly, a gallium nitride layer is formed, next, an aluminum gallium …

(57) ABSTRACT A semiconductor structure includes a first transistor includ ing a gate
structure, a drain, and a source. The gate structure of the first transistor includes a nitride …

US11444090B2 - Semiconductor device having a programming element - Google Patents
US11444090B2 - Semiconductor device having a programming element - Google Patents …

An insulating structure of a high electron mobility transistor (HEMT) is provided, which
comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium …

(57) ABSTRACT A modular converter includes an inverter having power semiconductor
switches made of GaN or InGaN and being operated with a blocking voltage of at least 400V …

Techniques are described for implementing diodes with low threshold voltages and high
breakdown voltages. Some embodiments further implement diode devices with pro …