Controlling electron tunneling is of fundamental importance in the design and operation of
semiconductor nanostructures such as field effect transistors (FETs) and quantum computing …

We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …

The recently-developed ability to control phosphorous-do** of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …

The precise positioning of dopants in semiconductors using scanning tunneling
microscopes has led to the development of planar dopant-based devices, also known as δ …

The atomically precise placement of dopants in semiconductors using scanning tunneling
microscopes has been used to create planar dopant-based devices, enabling the …

We report a novel nanoscale device concept based on a highly doped $\delta $-layer tunnel
junction embedded in a semiconductor for charge sensing. Recent advances in Atomic …

We present an efficient self-consistent implementation of the Non-Equilibrium Green
Function formalism, based on the Contact Block Reduction method for fast numerical …

Silicon processing techniques such as atomic precision advanced manufacturing (APAM)
and epitaxial growth require surface preparations that activate oxide desorption (typically> …

We investigate the different transport mechanisms that can occur in atomically precise
advanced-manufacturing (APAM) pn junction devices at cryogenic and room temperatures …

We present an open-system quantum-mechanical real-space study of the conductive
properties and size quantization in phosphorus δ-layers systems, interesting for their beyond …