Optics offers unique opportunities for reducing energy in information processing and
communications while simultaneously resolving the problem of interconnect bandwidth …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Silicon photonics is the most promising pathway to achieve> 10 Tb/s off-chip I/O bandwidth
required by next-generation high-performance computing and switching systems. Ring …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is
monolithically integrated with silicon-on-insulator waveguides. The active quantum well …

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

Electro-absorption from GeSi heterostructures is receiving growing attention as a high
performance optical modulator for short distance optical interconnects. Ge incorporation with …

With germanium showing significant promise in the design of electroabsorption modulators
for full complementary metal oxide semiconductor integration, we present a simple …

We propose a robust fabrication process for growing Ge and Ge-based heterostructures in
growth windows with Si sidewalls which can be applied to growth in thick Si optical …

We report on the design and simulation using 3D-FDTD simulation of Si 3 N 4-integrated
Ge/SiGe multiple quantum wells (MQWs) optical modulators at the optical wavelength of …