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Flexible and stretchable electronics for harsh‐environmental applications
Monitoring, measuring, and controlling electronic systems in space exploration, automotive
industries, downhole oil and gas industries, marine environment, geothermal power plants …
industries, downhole oil and gas industries, marine environment, geothermal power plants …
Advances in rational design and materials of high‐performance stretchable electromechanical sensors
Stretchable and wearable sensor technology has attracted significant interests and created
high technological impact on portable healthcare and smart human–machine interfaces …
high technological impact on portable healthcare and smart human–machine interfaces …
Recent advances in two-dimensional perovskite materials for light-emitting diodes
Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied
for a few decades, this field still has some room for improvement. In this regard, perovskite …
for a few decades, this field still has some room for improvement. In this regard, perovskite …
A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
W Wang, H Wang, W Yang, Y Zhu, G Li - Scientific Reports, 2016 - nature.com
High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the
combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) …
combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) …
Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer
S Zhou, H Hu, X Liu, M Liu, X Ding, C Gui… - Japanese Journal of …, 2017 - iopscience.iop.org
GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on
different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN …
different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN …
Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics
A monolithic III-nitride photonic circuit with integrated functionalities was implemented by
integrating multiple components with different functions into a single chip. In particular, the III …
integrating multiple components with different functions into a single chip. In particular, the III …
Photon management of GaN-based optoelectronic devices via nanoscaled phenomena
Photon management is essential in improving the performances of optoelectronic devices
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …
Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates
By growing an epitaxial GaN LED on C-rich a-SiC buffer deposited SiO2/Si substrate, the
simplified transfer to versatile flexible metallic/dielectric membranes is demonstrated. Both …
simplified transfer to versatile flexible metallic/dielectric membranes is demonstrated. Both …
Changes of electronic properties of p-GaN (0 0 0 1) surface after low-energy N+-ion bombardment
M Grodzicki, P Mazur, A Ciszewski - Applied Surface Science, 2018 - Elsevier
Abstract The p-GaN (0 0 0 1) crystal with a relatively low acceptor concentration of 5× 10 16
cm− 3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) …
cm− 3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) …
SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs
SA Kukushkin, LK Markov, AS Pavlyuchenko… - Coatings, 2023 - mdpi.com
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN
heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional …
heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional …