Flexible and stretchable electronics for harsh‐environmental applications

AS Almuslem, SF Shaikh… - Advanced Materials …, 2019 - Wiley Online Library
Monitoring, measuring, and controlling electronic systems in space exploration, automotive
industries, downhole oil and gas industries, marine environment, geothermal power plants …

Advances in rational design and materials of high‐performance stretchable electromechanical sensors

T Dinh, T Nguyen, HP Phan, TK Nguyen, VT Dau… - Small, 2020 - Wiley Online Library
Stretchable and wearable sensor technology has attracted significant interests and created
high technological impact on portable healthcare and smart human–machine interfaces …

Recent advances in two-dimensional perovskite materials for light-emitting diodes

D Tyagi, V Laxmi, N Basu, L Reddy, Y Tian, Z Ouyang… - Discover Nano, 2024 - Springer
Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied
for a few decades, this field still has some room for improvement. In this regard, perovskite …

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

W Wang, H Wang, W Yang, Y Zhu, G Li - Scientific Reports, 2016 - nature.com
High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the
combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) …

Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

S Zhou, H Hu, X Liu, M Liu, X Ding, C Gui… - Japanese Journal of …, 2017 - iopscience.iop.org
GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on
different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN …

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

Z Shi, X Gao, J Yuan, S Zhang, Y Jiang… - Applied Physics …, 2017 - pubs.aip.org
A monolithic III-nitride photonic circuit with integrated functionalities was implemented by
integrating multiple components with different functions into a single chip. In particular, the III …

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

YL Tsai, KY Lai, MJ Lee, YK Liao, BS Ooi… - Progress in Quantum …, 2016 - Elsevier
Photon management is essential in improving the performances of optoelectronic devices
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …

Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates

CH Cheng, TW Huang, CL Wu, MK Chen… - Journal of Materials …, 2017 - pubs.rsc.org
By growing an epitaxial GaN LED on C-rich a-SiC buffer deposited SiO2/Si substrate, the
simplified transfer to versatile flexible metallic/dielectric membranes is demonstrated. Both …

Changes of electronic properties of p-GaN (0 0 0 1) surface after low-energy N+-ion bombardment

M Grodzicki, P Mazur, A Ciszewski - Applied Surface Science, 2018 - Elsevier
Abstract The p-GaN (0 0 0 1) crystal with a relatively low acceptor concentration of 5× 10 16
cm− 3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) …

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

SA Kukushkin, LK Markov, AS Pavlyuchenko… - Coatings, 2023 - mdpi.com
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN
heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional …