Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting

FZ Tijent, P Voss, M Faqir - Materials Today Energy, 2023 - Elsevier
Photoelectrochemical (PEC) water splitting is a promising approach for hydrogen production
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …

Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

MG Kibria, S Zhao, FA Chowdhury, Q Wang… - Nature …, 2014 - nature.com
Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure

LF Zagonel, S Mazzucco, M Tencé, K March… - Nano …, 2011 - ACS Publications
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …

Do** of semiconductor nanowires

J Wallentin, MT Borgström - Journal of Materials Research, 2011 - cambridge.org
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert… - Nano Research, 2010 - Springer
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

[HTML][HTML] Nanowire LEDs grown directly on flexible metal foil

BJ May, ATM Sarwar, RC Myers - Applied Physics Letters, 2016 - pubs.aip.org
Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta
and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured …

P-type do** of GaN nanowires characterized by photoelectrochemical measurements

J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir… - Nano Letters, 2017 - ACS Publications
GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si (111)
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …

Molecular beam epitaxy of GaN nanowires on epitaxial graphene

S Fernández-Garrido, M Ramsteiner, G Gao… - Nano …, 2017 - ACS Publications
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …

Do** challenges and pathways to industrial scalability of III–V nanowire arrays

W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …