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Vapor phase growth of semiconductor nanowires: key developments and open questions
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
plethora of different synthesis techniques. In this review, we focus on the vapor phase …
Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting
FZ Tijent, P Voss, M Faqir - Materials Today Energy, 2023 - Elsevier
Photoelectrochemical (PEC) water splitting is a promising approach for hydrogen production
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …
Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting
Solar water splitting is one of the key steps in artificial photosynthesis for future carbon-
neutral, storable and sustainable source of energy. Here we show that one of the major …
neutral, storable and sustainable source of energy. Here we show that one of the major …
Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure
We report the spectral imaging in the UV to visible range with nanometer scale resolution of
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
closely packed GaN/AlN quantum disks in individual nanowires using an improved custom …
Do** of semiconductor nanowires
A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
impurity do**. In this review article, we discuss the key results in the field of semiconductor …
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …
[HTML][HTML] Nanowire LEDs grown directly on flexible metal foil
Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta
and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured …
and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured …
P-type do** of GaN nanowires characterized by photoelectrochemical measurements
J Kamimura, P Bogdanoff, M Ramsteiner, P Corfdir… - Nano Letters, 2017 - ACS Publications
GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si (111)
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
S Fernández-Garrido, M Ramsteiner, G Gao… - Nano …, 2017 - ACS Publications
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …