The finite-difference time-domain (FDTD) method was employed to simulate the electric field
distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation …

Antimony segregation in Ge (001) films grown by molecular beam epitaxy was studied. A
quantitative dependence of the Sb segregation ratio in Ge on growth temperature was …

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD)
fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature …

The monolithic integration of III–V materials on silicon appears as the most promising, cost-
effective, and versatile method for next-generation optoelectronic devices. Here, we report …

The influence of Germanium-on-Silicon waveguide geometries on single-mode and
multimode operations as well as on zero birefringence conditions has been deeply …

It has been verified through numerical simulations calibrated to experimental data the
changes that the insertion of a germanium layer can bring to the electrical power generation …

In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at
a low growth temperature (220° C). The quality of the boron-doped epilayers is dependent …

We report polarized Raman scattering results of Ge1− ySny (0≤ y≤ 0.09) epitaxial layers
grown on Ge‐buffered Si substrates. Polarized Raman spectra from the sample surfaces …

In this study, we use electron cyclotron resonance chemical vapor deposition to investigate
the strain behavior in Ge epilayers grown on silicon at a low temperature of 220 C. The …

SiGe nanoislands were grown by Molecular Beam Epitaxy (MBE) method on Si (100)
substrates with comparative growth parameters such as annealing temperature, top Ge …