Contact layer traces to program programmable ROM

A Behera - US Patent 11,373,719, 2022 - Google Patents
A device includes a programmable ROM circuit, an address circuit, and a processor. The
programmable ROM circuit includes multiple physically contiguous pairs of bit-cells, each …

Memory and operating method thereof

MF Chang, C Yen-Cheng - US Patent 12,217,795, 2025 - Google Patents
A memory includes a memory device, a reading device and a feedback device. The memory
device stores a plurality of bits. The reading device includes first and second reading circuits …

Contact layer traces to program programmable ROM

A Behera - US Patent 11,676,675, 2023 - Google Patents
(57) ABSTRACT A device includes a programmable ROM circuit, an address circuit, and a
processor. The programmable ROM circuit includes multiple physically contiguous pairs of …

Memory and operating method thereof

MF Chang, C Yen-Cheng - US Patent 11,996,147, 2024 - Google Patents
A memory includes a memory device, a reading device and a feedback device. The memory
device stores a plurality of bits. The reading device includes first and second reading circuits …

Current leakage management controller for reading from memory cells

M Tsivyan, S Zhou, K Rajasekharan, W Lu… - US Patent …, 2024 - Google Patents
First and second sensing circuits are coupled to first and second data lines, respectively,
and sense levels of current leakage or a memory cell state on the first and second data lines …