Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs
featuring increased optical confinement in the quantum well, Γ, are shown to have improved …

Experimental studies into the beam parameter product (BPP) of 940–980 nm GaAs-based
high-power diode lasers are presented. Such lasers exhibit broadening far field and …

GaAs based high power broad area lasers are the most efficient source of optical energy
and are used in many industrial applications. Despite considerable improvement in power …

High-efficiency laser diodes often adopt high mirror loss design to improve the external
differential efficiency of the device. However, the significantly elevated threshold carrier …

Broad-area diode lasers (BALs) with high power are highly desirable for a variety of
applications. However, such lasers suffer from strongly deteriorated beam quality due to …

Results of an extended series of experimental studies into the beam parameter product
(BPP) of high-power diode lasers are summarized, covering efforts to clearly diagnose the …

We report the first demonstration of 1.2 J-emission into long pulses (ms) from passively
cooled laser bars. These efficient high-fill-factor bars were developed for long-pulse …

High power broad area diode lasers with high optical power density in a small focus spot are
in strong commercial demand. For this purpose, the beam quality, quantified via the beam …

High-power broad-area diode lasers are needed for a variety of applications. However, such
lasers suffer from deteriorated beam quality due to multimode behavior in the lateral …

High power diode lasers with novel extreme-double-asymmetric epitaxial designs with
increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) …