The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

The future of solid-state lighting relies on how the performance parameters will be improved
further for develo** high-brightness light-emitting diodes. Eventually, heat removal is …

The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated
AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography …

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …

This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

The peak power density of GaN high-electron-mobility transistor technology is limited by a
hierarchy of thermal resistances from the junction to the ambient. Here, we explore the …

Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …

Pump–probe thermoreflectance has been commonly applied for characterizing the thermal
properties of materials. Generally, a reliable and efficient non-linear fitting process is often …

High-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs) requires
efficient heat removal through the substrate. GaN composite substrates, including the high …