Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …

▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

Quantum Wells, Wires and Dots provides all the essential information, both theoretical and
computational, to develop an understanding of the electronic, optical and transport …

This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …

The pure dephasing of the optical polarization and the corresponding line shape of
absorption spectra in small quantum dots due to the interaction of the exciton both with …

New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum
dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole …

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …

Auger recombination and thermalization time are detrimental in reducing the gain threshold
of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic …

The electronic structure of interfaces between lattice-mismatched semiconductors is
sensitive to the strain. We compare two approaches for calculating such inhomogeneous …