We propose, fabricate, and evaluate strain-induced InGaAs/InAlAs superlattice (SL), which
can efficiently radiate broadband terahertz (THz) waves. By means of optical pump-probe …

In this Letter, optical-to-terahertz (THz) conversion of 800 nm femtosecond laser pulses in
large-area bias-free InGaAs emitters based on photo-Dember (PD) and lateral photo …

Bismuth telluride (Bi 2 Te 3)-based heterostructures have attracted considerable attention
owing to their interesting anisotropic properties and expected higher thermoelectric …

Although gallium oxide Ga2O3 is attracting much attention as a next-generation ultrawide
bandgap semiconductor for various applications, it needs further optical characterization to …

We present an experimental study of the terahertz emission from In x Ga 1− x As epitaxial
layers that were grown while varying the alloy fraction x. We observe the terahertz emission …

We report on the time-resolved measurements of photocarrier dynamics in InGaAs/InAlAs
superlattices with epitaxial stresses in a wide range of optical pump fluences. We …

We study the changes of Bi electronic structure near T and L points of the Brillouin zone
caused by do** with Sn (concentrations≤ 0.08 at.%). Hall coefficient and …

Compact and cost-effective spectrometers and imaging systems in the terahertz (THz)
frequency range based on optical-THz photoconductive converters of ultrashort laser pulses …

In this work, magnetic nanocomposite films were prepared using magnetorheological fluids
(MRFs) and were characterized by time-domain terahertz spectroscopy. Applying magnetic …

Intense terahertz (THz) emission in high quality GaAs film upon ultrafast excitation is
demonstrated. Results showed that high quality GaAs grown by molecular beam epitaxy …