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Reliability and variability of advanced CMOS devices at cryogenic temperatures
In this work, we present time-zero variability and degradation data obtained from a large set
of on-chip devices in specifically designed arrays, from room temperature to 4K. We show …
of on-chip devices in specifically designed arrays, from room temperature to 4K. We show …
Predictive hot-carrier modeling of n-channel MOSFETs
We present a physics-based hot-carrier degradation (HCD) model and validate it against
measurement data on SiON n-channel MOSFETs of various channel lengths, from …
measurement data on SiON n-channel MOSFETs of various channel lengths, from …
[HTML][HTML] Reliability of miniaturized transistors from the perspective of single-defects
M Waltl - Micromachines, 2020 - mdpi.com
To analyze the reliability of semiconductor transistors, changes in the performance of the
devices during operation are evaluated. A prominent effect altering the device behavior are …
devices during operation are evaluated. A prominent effect altering the device behavior are …
Observation of normally distributed energies for interface trap recovery after hot-carrier degradation
We investigate the temperature accelerated recovery from hot-carrier (HC) damage with the
help of local polycrystalline heating structures in n-MOSFETs designed for power …
help of local polycrystalline heating structures in n-MOSFETs designed for power …
3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes
T Garba-Seybou, X Federspiel… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB)
under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to …
under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to …
Modeling of hot-carrier degradation in nLDMOS devices: different approaches to the solution of the Boltzmann transport equation
We propose two different approaches to describe carrier transport in n-laterally diffused
MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for …
MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for …
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the …
Degradation mechanisms, such as Bias Temperature Instabilities (BTI) and Hot Carrier
Degradation (HCD), as well as the associated time-dependent variability, dictate the limit on …
Degradation (HCD), as well as the associated time-dependent variability, dictate the limit on …
Hot-carrier degradation and bias-temperature instability in single-layer graphene field-effect transistors: Similarities and differences
We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect
transistors (GFETs) and compare those findings with the bias-temperature instability (BTI) …
transistors (GFETs) and compare those findings with the bias-temperature instability (BTI) …
Investigation of the off-state degradation in advanced FinFET technology—Part II: Compact aging model and impact on circuits
Part I of this article revealed that the OFF-state degradation consists of both bias temperature
instability (BTI) and hot carrier degradation (HCD) traps in different channel regions. In part II …
instability (BTI) and hot carrier degradation (HCD) traps in different channel regions. In part II …