Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
Strain engineering as one of the most powerful techniques for tuning optical and electronic
properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we …
properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we …
A microchip based on high electron mobility transistor for the detection of phosphate in food
S Hu, X Jiang, Y Weng, Y Liu, A Gao, H Wen… - Sensors and Actuators A …, 2025 - Elsevier
Phosphate is an essential food additive, but excessive intake can cause kidney injury and
hyperphosphatemia. Consequently, accurate and efficient detection of phosphate used in …
hyperphosphatemia. Consequently, accurate and efficient detection of phosphate used in …
Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si (111) substrate with AlGaN/AlN strained layer superlattice after dislocation …
Dislocation reaction in a GaN layer grown on 4-in. Si (111) with AlGaN/AlN strained layer
superlattice was observed by transmission electron microscopy. The reaction between a …
superlattice was observed by transmission electron microscopy. The reaction between a …
[HTML][HTML] Optical and structural study of deformation states in the GaN/AlN superlattices
We report on the effect of strain on the optical and structural properties of 5-, 10-, and 20-
period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy …
period GaN/AlN superlattices (SLs) deposited by plasma-assisted molecular beam epitaxy …
Characterization of dislocations in GaN layer grown on 4-inch Si (111) with AlGaN/AlN strained layer superlattices
Dislocations in a GaN layer grown on 4-in. Si (111) with AlGaN/AlN strained layer
superlattices using a horizontal metal–organic chemical vapor deposition system were …
superlattices using a horizontal metal–organic chemical vapor deposition system were …
pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
The growth and characterization of pn-junction photodiode based on GaN grown on Si (111)
by RF-plasma assisted molecular beam epitaxy (MBE) are described. The structural and …
by RF-plasma assisted molecular beam epitaxy (MBE) are described. The structural and …
Characterization of nitride‐based LED materials and devices using TOF‐SIMS
X Wei, L Zhao, J Wang, Y Zeng… - Surface and Interface …, 2014 - Wiley Online Library
Nitride‐based light‐emitting diodes (LEDs) have been developed significantly in terms of
both fundamental understanding as well as application, but there are still many new …
both fundamental understanding as well as application, but there are still many new …
[HTML][HTML] Analysis of reaction between c+ a and-c+ a dislocations in GaN layer grown on 4-inch Si (111) substrate with AlGaN/AlN strained layer superlattice by …
The behavior of dislocations in a GaN layer grown on a 4-inch Si (111) substrate with an
AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor …
AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor …
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111)
The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density
and its subsequent influence on the residual stresses in GaN buffer layers grown using …
and its subsequent influence on the residual stresses in GaN buffer layers grown using …
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111)
The effect of carbon do** on the structural and electrical properties of GaN buffer layer of
AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the …
AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the …