Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

This Minireview aims to give an introduction to beryllium chemistry for all less‐experienced
scientists in this field of research. Up to date information on the toxicity of beryllium and its …

The need for increased control of layer thickness and uniformity as device dimensions shrink
has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

La-doped BaSnO 3 has been epitaxially integrated with (001) Si using an SrTiO 3 buffer
layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO 3 buffer layer was …

We demonstrated a new method for the low-temperature solid-phase crystallization (SPC) of
germanium on beryllium oxide (BeO) films for monolithic 3D (M3D) integration. Using a …

We report the energy-band alignment of atomic layer-deposited (ALD) beryllium oxide (BeO)
films and β-Ga 2 O 3 substrates. BeO is a unique oxide with a high dielectric constant and …

The effects of hot-rolling on the secondary electron property evolution of activated Cu-2.7 Be
sheets were investigated in this study. The microstructures of both pristine and activated Cu …

Six metal carbonates (Li 2 CO 3, Na 2 CO 3, SrCO 3, BaCO 3, K 2 CO 3, CoCO 3) are tested
and compared as anode materials for lithium ion batteries. The electrochemical results show …