Self-latching operation of MOBILE circuits using series-connection of RTDs and transistors

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Voltage-controlled multiple-valued logic design using negative differential resistance devices

KJ Gan, CS Tsai, YW Chen, WK Yeh - Solid-state electronics, 2010 - Elsevier
This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL)
design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage …
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Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process

KJ Gan, CS Tsai, DS Liang - Analog Integrated Circuits and Signal …, 2010 - Springer
We investigate four novel negative-differential-resistance (NDR) circuits using the
combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect …
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Operation limits for RTD-based MOBILE circuits

JM Quintana, MJ Avedillo, J Nunez… - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
Resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE)
circuits operate properly in a certain frequency range. They exhibit both a minimum …
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Design of ternary D flip-flop with pre-set and pre-reset functions based on resonant tunneling diode literal circuit

M Lin, W Lü, L Sun - Journal of Zhejiang University SCIENCE C, 2011 - Springer
The problems existing in the binary logic system and the advantages of multiple-valued logic
(MVL) are introduced. A literal circuit with three-track-output structure is created based on …
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Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process

KJ Gan, CS Tsai, DS Liang - Analog Integrated Circuits and Signal …, 2009 - Springer
A novel multiple-selected and multiple-valued memory (MSMVM) design using the negative
differential resistance (NDR) circuits is demonstrated. The NDR circuits are made of Si …
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Experimental validation of a two-phase clock scheme for fine-grained pipelined circuits based on monostable to bistable logic elements

J Núñez, MJ Avedillo… - IEEE Transactions on very …, 2014 - ieeexplore.ieee.org
Research on fine-grained pipelines can be a way to obtain high-performance applications.
Monostable to bistable (MOBILE) gates are very suitable for implementing gate-level …
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A New XOR Structure Based on Resonant‐Tunneling High Electron Mobility Transistor

MJ Sharifi, D Bahrepour - VLSI Design, 2009 - Wiley Online Library
A new structure for an exclusive‐OR (XOR) gate based on the resonant‐tunneling high
electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and …
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A design for triple-valued NAND and NOR gates based on resonant tunneling devices

L Mi, L Weifeng, S Lingling - Journal of Semiconductors, 2007 - jos.ac.cn
The unique negative differential resistance characteristics lead the RT (resonant tunnel)
devices to multiple-valued applications. In this paper, an RT switching circuit model is …
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Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit

KJ Gan, CS Tsai, CW Hsien, YK Li, WK Yeh - Analog Integrated Circuits …, 2011 - Springer
The monostable–bistable transition logic element (MOBILE) is a promising application for
negative differential resistance (NDR) circuit. Previously reported MOBILE is constructed by …
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Synthesis of generalised threshold gates and multi threshold threshold gates

M Nikodem, MA Bawiec… - 2011 21st International …, 2011 - ieeexplore.ieee.org
We present formal models and efficient synthesis algorithms for threshold gates of
Generalised Threshold Gate (GTG) and Multi Threshold Threshold Gate (MTTG) structures …
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