Gallium nitride single crystal (GaN) is difficult to achieve high-efficiency and low-damage
machining due to anisotropy, high hardness and brittleness. Nanoscratch tests of GaN …

The mechanical response of CuAlNi nanocrystalline under the nanoscratch through an
abrasive tip sliding on the workpiece is investigated using molecular dynamics (MD) …

In this work, molecular dynamics simulations are performed to investigate the nanoscale
wear behavior of SiC particle-reinforced aluminum matrix composites (SiC/Al NCs) through …

Single-crystal silicon is extensively applied in electronic devices, but the traditional
ultraprecision diamond turning methods easily cause worse surface quality or surface …

Single crystal aluminum nitride (AlN) as a new generation of ultra-wide band gap
semiconductor materials is the preferred substrate material for high power, high RF devices …

Sapphire is a typical hard and brittle material, making it difficult to investigate its plastic
deformation behavior using conventional mechanical experimental methods. Although …

Molecular dynamics (MD) simulations are performed to study the mechanical behavior of
SiGe thin film during nanoindentation and nanoscratching processes. The MD simulations of …

The anisotropic hardness, elastic modulus, and dislocation behavior of AlN grains were
investigated by Berkovich nanoindentation. Grain orientation had a strong correlation with …

The scratching-induced material removal behavior and mechanism of single-crystal AlN
using single diamond abrasive were studied at atomic level through molecular dynamics …

The ion beam polishing techniques for silicon wafers play a key role in the fabrication of
optical element. However, the dynamical ion beam polishing process at nanoscale time and …