Biomass, a naturally abundant, sustainable and clean resource has great potential as an
alternative to replace the limited fossil feedstock for value‐added chemicals and fuels …

The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

The growth of single‐crystal III‐nitride films with a low stress and dislocation density is
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues
associated with the poor quality and large strain of nitride material system caused by the …

The mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001)
sapphire and exhibiting different grain diameters is studied using high-resolution x-ray …

We report on the implementation of crystal ion slicing in lithium niobate (LiNbO 3). Deep-ion
implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of …

High-resolution x-ray diffraction has been used to analyze the type and density of threading
dislocations in (001)-oriented GaN epitaxial layers. For this,(00l) and (hkl) Bragg reflections …

High-efficiency InGaN light-emitting diodes (LEDs) in the" green gap" range were fabricated
on c-face sapphire (0001) substrates. Optical properties were enhanced by band …

We develop a reciprocal-space model that describes the (hkl) dependence of the broadened
Bragg peakwidths produced by x-ray diffraction from a dislocated epilayer. We compare the …