In recent years, magnetic RAMs have stimulated considerable research interest due to its
high area-density and low leakage-power with comparable speed that makes it a strong …

This brief presents an energy-efficient and high-performance XNOR-bitcount architecture
exploiting the benefits of computing-in-memory (CiM) and unique properties of spin-transfer …

This paper evaluates the potential of spin-transfer torque magnetic random-access
memories (STT-MRAMs) operating at cryogenic temperatures. Our study was carried out at …

The ever-growing interest in cryogenic applications has prompted the investigation for
energy-efficient and high-density memory technologies that are able to operate efficiently at …

This article investigates spin-transfer torque magnetic random access memories (STT-
MRAMs) based on double-barrier magnetic tunnel junction (DMTJ) with two reference layers …

We design a spintronic physical unclonable function (PUF) based on sub-100 nm voltage-
controlled magnetic anisotropy hybrid magnetic tunnel junctions (VCMA-MTJs). This …

Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic
tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile …

This brief deals with the impact of spin-transfer torque magnetic random access memory
(STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the …

This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-
Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from …

Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a
premiere candidate for replacing conventional six-transistors static random-access memory …