Computationally predicted energies and properties of defects in GaN

JL Lyons, CG Van de Walle - NPJ Computational Materials, 2017 - nature.com
Recent developments in theoretical techniques have significantly improved the predictive
power of density-functional-based calculations. In this review, we discuss how such …

Design of nitride semiconductors for solar energy conversion

A Zakutayev - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

When group-III nitrides go infrared: New properties and perspectives

J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf… - Optics express, 2011 - opg.optica.org
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

CJ Neufeld, NG Toledo, SC Cruz, M Iza… - Applied Physics …, 2008 - pubs.aip.org
We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. In
x Ga 1− x N/GaN pin double heterojunction solar cells are grown by metal-organic chemical …

Coaxial group III− nitride nanowire photovoltaics

Y Dong, B Tian, TJ Kempa, CM Lieber - Nano letters, 2009 - ACS Publications
Coaxial core/shell nanowires represent an important class of nanoscale building blocks with
substantial potential for exploring new concepts and materials for solar energy conversion …

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

R Dahal, B Pantha, J Li, JY Lin, HX Jiang - Applied Physics Letters, 2009 - pubs.aip.org
We report on the fabrication and photovoltaic characteristics of InGaN solar cells by
exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3 …

InGaN solar cells: present state of the art and important challenges

AG Bhuiyan, K Sugita, A Hashimoto… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
Solar cells are a promising renewable and carbon-free electric energy resource to address
the fossil-fuel shortage and global warming. Energy conversion efficiencies over 40% have …

Third generation photovoltaics

GF Brown, J Wu - Laser & Photonics Reviews, 2009 - Wiley Online Library
We review recent progress towards increasing solar cell efficiencies beyond the Shockley‐
Queisser efficiency limit. Four main approaches are highlighted: multi‐junction cells …

High internal and external quantum efficiency InGaN/GaN solar cells

E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji… - Applied Physics …, 2011 - pubs.aip.org
High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The
internal quantum efficiency was assessed through the combination of absorption and …