Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors

E Chou, H Beshary, M Wei, R Hijab… - 2023 IEEE BiCMOS …, 2023 - ieeexplore.ieee.org
This paper provides a survey of silicon bulk CMOS, FD-SOI, SOI, and SiGe transceivers and
compares their performance to compound semiconductor implementations in III-V …

Impact of Self-Heating in 5nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit Interaction

SS Parihar, G Pahwa, YS Chauhan… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
Cryogenic Complementary Metal Oxide Semiconductor (CMOS) circuitry is inevitable to
drive and read out qubits for the realization of scalable Quantum Computers (QCs). Analog …

Characterization and Experimental Validation of Self Heating in RF LDMOS Transistor using BSIM-BULK Model

A Sharma, SS Parihar, YH Zarkob… - 2024 8th IEEE …, 2024 - ieeexplore.ieee.org
The article presents the self-heating (SH) characterization and experimental validation of RF
bulk Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) transistor. It provides a …

[PDF][PDF] FinFET Technology: Modeling and RF Characterization for 5nm Node Technology: A Review

NS Sriram, JV Suman - 2023 - academia.edu
The study offers new methods for understanding and simulating the radiofrequency, analog,
and thermal characteristics of the FinFET at the 5nm CMOS technology node. The results of …